NSB1011XV6T5

NSB1011XV6T5

$0.04
  • Description:SMALL SIGNAL BIPOLAR TRANSISTOR
  • Series:-

SKU:1db58c9e886b Category: Brand:

  
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Product Detailed Parameters

  • Description:SMALL SIGNAL BIPOLAR TRANSISTOR
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:2 NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms, 2.2kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V / 80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA
  • Frequency - Transition:-
  • Power - Max:500mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563

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NSB1011XV6T5

Overview

The NSB1011XV6T5 is a dual NPN pre-biased digital transistor manufactured by onsemi. It integrates two NPN bipolar junction transistors with built-in biasing resistors within a single surface-mount package. The device is designed for switching applications, offering simplified circuit design by reducing component count. Key electrical characteristics include a collector-emitter voltage rating of 50V and a continuous collector current capability of 100mA. The unit utilizes the SOT-563 (CASE-403AB) six-pin package, providing a compact footprint suitable for space-constrained portable electronics and general-purpose logic interface tasks.

Feature Summary

  • Dual NPN configuration with integrated base resistors for simplified drive circuits
  • Compact SOT-563 surface-mount package for high-density PCB layouts
  • Designed as a direct replacement for discrete resistor-transistor networks

Applications

  • General-purpose switching in consumer electronics
  • Logic level shifting and buffer interfaces
  • Driver circuits for LEDs and relays

Procurement Notes

Verify the specific ordering suffix to ensure compatibility with required tape-and-reel quantities and RoHS compliance status. Confirm that the SOT-563 package dimensions align with existing footprints. Cross-reference the manufacturer's latest datasheet for updated thermal derating curves and storage temperature limits before finalizing procurement specifications.

Selection Notes

Select this component when a dual NPN switch with fixed biasing is required to minimize external components. Ensure the application voltage does not exceed the 50V collector-emitter rating. Consider the internal resistor values if precise base current limiting is critical for the driving source. Verify power dissipation requirements against the thermal characteristics of the SOT-563 package under expected operating conditions.

Part Context

This part belongs to onsemi's family of pre-biased digital transistors, which combine bipolar junction transistors with internal resistors. These devices are engineered to replace multiple discrete components, thereby saving board space and assembly time. The NSB series specifically targets applications requiring reliable switching performance in compact form factors, commonly found in mobile devices and peripheral interfaces.

Replacement Considerations

Direct substitutes may include other dual NPN pre-biased transistors in SOT-563 packages from manufacturers such as Diodes Incorporated or ROHM. Verify pinout compatibility and electrical ratings, particularly Vceo and Ic, before substitution. Ensure internal resistor values match the original design requirements to maintain correct biasing.

NSB1011XV6T5NSB1011XV6T5
$0.04
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