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The NSB1706DMW5T1 is a dual NPN silicon surface mount transistor featuring an integrated monolithic bias resistor network. It houses two Bias Resistor Transistors (BRTs) within a single SC-88A package, designed to replace individual transistors and external resistors. Key electrical parameters include a collector-emitter voltage of 50 Vdc, a continuous collector current of 100 mAdc, and a typical DC current gain of 200 at 5.0 mA. The internal bias network consists of a series base resistor (R1) with a typical value of 4.7 kΩ and a base-emitter resistor (R2).
Verify the specific ordering suffix when sourcing this component. The 'G' suffix indicates a lead-free package configuration, which may differ from the standard version regarding material composition. Confirm that the required tape and reel specifications align with manufacturing equipment capabilities before finalizing procurement orders.
Select this component for designs requiring dual NPN switching with integrated biasing in a compact footprint. Ensure the application operates within the specified thermal limits, as the total device dissipation is rated at 187 mW for one junction heated on minimum pads. Verify that the 50 V collector-emitter breakdown voltage meets the circuit requirements.
This part belongs to the NSB1706 series of dual bias resistor transistors manufactured by ON Semiconductor. These devices are specifically engineered to simplify circuit design by combining active and passive elements. The SC-88A package provides a standardized form factor suitable for automated surface mount assembly processes.
The NSB1706DMW5T1G serves as the lead-free equivalent variant of this component. When substituting, verify that the pinout and electrical characteristics remain identical to ensure compatibility with existing PCB layouts and circuit performance expectations.