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Product Detailed Parameters
- Description：TRANS 2PNP PREBIAS 0.5W SOT563
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Transistor Type：2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：1kOhms
- Resistor - Emitter Base (R2)：1kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：3 @ 5mA, 10V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：500mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
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Overview
The NSBA113EDXV6T1 is a dual PNP Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-563 surface-mount package. It integrates two PNP transistors with monolithic bias resistor networks, replacing discrete components to simplify circuit design and reduce board space. Key electrical parameters include a collector-emitter voltage of -50 Vdc and a continuous collector current of -100 mAdc. The device features integrated resistors R1 and R2, both specified at 1.0 kOhm. Thermal characteristics specify a total device dissipation of 357 mW for one junction heated and 500 mW for both junctions heated at 25°C ambient temperature.
Feature Summary
- Integrates two PNP transistors with monolithic bias resistor networks into a single device
- Eliminates the need for external individual biasing components
- Designed for low-power surface mount applications where board space is limited
Applications
- Low-power surface mount circuits requiring compact transistor solutions
- Applications needing simplified circuit design through component integration
- Systems prioritizing reduced board space and lower component count
Procurement Notes
Verify the specific ordering suffix and tape-and-reel pitch requirements against the manufacturer's official documentation before procurement. Confirm that the lead-free solder plating specifications align with your assembly process standards. Ensure the SOT-563 package dimensions match your PCB footprint design constraints.
Selection Notes
Select this component when a dual PNP configuration with integrated biasing is required. Verify that the 1.0 kOhm internal resistor values meet your circuit's base drive requirements. Ensure the -50 Vdc voltage rating and -100 mAdc current limits accommodate your operational conditions without exceeding thermal dissipation limits.
Part Context
This part belongs to the NSBA114EDXV6 series of dual bias resistor transistors. The series includes various resistor combinations within the same SOT-563 package. The NSBA113EDXV6T1 specifically utilizes 1.0 kOhm resistors for both R1 and R2, distinguishing it from other variants in the family with different resistance ratios.
Replacement Considerations
NSBA114EDXV6T1
FAQ
What are the values of the integrated resistors in the NSBA113EDXV6T1?
The NSBA113EDXV6T1 contains two integrated resistors, R1 and R2, both with a value of 1.0 kOhm.
What is the maximum collector-emitter voltage for this device?
The maximum collector-emitter voltage (VCEO) for the NSBA113EDXV6T1 is -50 Vdc.
How does the BRT design benefit circuit layout?
The BRT design eliminates the need for external biasing resistors, thereby reducing the component count and saving valuable board space in surface mount applications.
