NSBA113EDXV6T1G

Overview

The NSBA113EDXV6T1G is a dual PNP Bipolar Digital Transistor (BRT) manufactured by onsemi. It integrates two NPN transistors with monolithic bias resistor networks in a SOT-563-6 surface-mount package. The device features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Each transistor includes a series base resistor and an emitter-base resistor, both typically valued at 1 kOhms, resulting in a resistance ratio of 1. The minimum DC current gain (hFE) is specified as 3. Power dissipation is rated at 357 mW, with an operating temperature range from -55°C to +150°C.

Feature Summary

• Integrates dual PNP transistors with built-in bias resistors to replace discrete components and external resistor networks.
• Features a monolithic bias network consisting of a series base resistor and an emitter-base resistor for simplified circuit design.
• Provides high-density packaging in a compact SOT-563-6 form factor suitable for space-constrained applications.

Applications

• General-purpose switching circuits requiring pre-biased PNP transistors.
• Replacement for discrete transistor and resistor combinations in digital logic interfaces.
• Low-power signal switching in consumer electronics and industrial control systems.

Procurement Notes

Verify component authenticity through authorized onsemi distributors or certified suppliers. Confirm the specific ordering suffix matches the required tape and reel configuration. Check for recent Product Change Notifications (PCN) regarding manufacturing site or process changes. Ensure storage conditions comply with moisture sensitivity level requirements before soldering. Validate that the lead-free status aligns with environmental compliance standards for the target assembly.

Selection Notes

Select this component when a dual PNP digital transistor with low current gain and 1 kOhm bias resistors is required. Compare against other NSBA series variants if different resistance values or higher hFE are needed. Consider the SOT-563-6 footprint compatibility during PCB layout. Evaluate thermal performance based on the 357 mW power dissipation limit in the final enclosure environment.

Part Context

This part belongs to the NSBA113EDXV6 series of Bias Resistor Transistors. It shares the SOT-563-6 package with other onsemi BRTs like the NSBC113EDXV6T1G (NPN version). The series is designed to reduce board space and assembly costs by integrating biasing resistors directly with the transistor die.

Replacement Considerations

Direct substitutes include the NSBC113EDXV6T1G if NPN polarity is acceptable. Other dual PNP BRTs in SOT-563-6 such as NSBA123EDXV6T1G may require verification of resistance values and hFE specifications. Cross-reference datasheets for pinout compatibility and electrical parameter margins before substitution.