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The NSBA114EDP6T5G is a dual pre-biased NPN digital transistor manufactured by onsemi. It integrates two NPN transistors with built-in bias resistors in a compact SOT-363 (SC-88) surface-mount package. The device features a collector-emitter voltage rating of 50 V and a continuous collector current capability of 100 mA. Designed for high-density applications, it offers a typical input resistance of 10 kOhms per channel. The component operates within a temperature range of -55 °C to +150 °C and supports peak DC collector currents up to 200 mA.
Verify the specific suffix P6T5G against official datasheets to confirm pinout and electrical characteristics. Ensure RoHS compliance documentation matches the manufacturing date code. Confirm availability through authorized distributors as lead times may vary based on production schedules.
Select this component when space constraints require dual NPN switching with integrated base resistors. Compare input resistance values against drive source capabilities to ensure proper saturation. Verify that the 50 V voltage rating exceeds the maximum circuit voltage under all operating conditions.
This part belongs to the NSBA series of dual pre-biased transistors from onsemi. It serves as a compact alternative to discrete resistor-transistor networks. The series is designed to reduce board space and assembly costs in consumer electronics and industrial control systems requiring multiple switching elements.
Check equivalent parts from other manufacturers such as DTC114E variants or similar SOT-363 dual NPN packages. Verify pin compatibility and electrical parameters before substitution.