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The NSBA114EDXV6T1 is a dual pre-biased PNP digital transistor manufactured by onsemi. It integrates two PNP transistors with monolithic bias resistor networks into a single SOT-563 package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of -100 mA. The device features a typical input resistance of 10 kOhms and a minimum DC current gain (hFE) of 80. Power dissipation is rated at 357 mW, with an operating temperature range from -55°C to +150°C.
Verify the exact part number against official manufacturer documentation, as specific suffixes define configuration details. Confirm RoHS compliance status through the latest datasheet or environmental reports provided by onsemi. Ensure the component source is authorized to guarantee authenticity and traceability.
Select this component when a dual PNP configuration with integrated biasing is required in a small footprint. Compare the 10 kOhm input resistance and 50 V voltage rating against circuit requirements. Verify that the SOT-563 package dimensions fit the available board space constraints.
This component belongs to the NSBA series of Bias Resistor Transistors (BRTs). These devices are designed to simplify circuit design by combining transistors and resistors. The series offers various configurations to reduce system cost and board space compared to discrete solutions.
Direct substitutes may include other dual PNP BRTs in SOT-563 packages with similar electrical ratings. Verify pinout compatibility and thermal characteristics before substitution.