NSBA114EDXV6T1G

Overview

The NSBA114EDXV6T1G is a dual digital transistor manufactured by onsemi, featuring two PNP transistors integrated with monolithic bias resistor networks within a SOT-563-6 surface-mount package. It operates with a maximum collector-emitter voltage of 50 V and supports a continuous collector current of -100 mA. The device includes typical input resistors of 10 kOhms and exhibits a minimum DC current gain (hFE) of 80. Power dissipation is rated at 357 mW, with an operating temperature range spanning from -55 °C to +150 °C.

Feature Summary

• Integrates dual PNP transistors with built-in bias resistor networks to replace discrete components
• Designed for space-constrained applications through compact SOT-563-6 packaging
• Supports high-temperature operation up to 150 °C

Applications

• General-purpose switching circuits
• Driver stages for logic interfaces
• Biasing networks in signal processing

Procurement Notes

Verify the specific suffix DXV6 against official datasheets to confirm pinout and electrical characteristics match design requirements. Confirm RoHS compliance status via manufacturer documentation before integration. Ensure ESD handling protocols are followed during assembly due to the small form factor.

Selection Notes

Select this component when a dual PNP configuration with integrated biasing is required. Compare the 10 kOhm base resistance against circuit drive capabilities. Verify that the 50 V breakdown voltage exceeds peak transient voltages in the target application environment.

Part Context

This part belongs to the NSBA series of Bias Resistor Transistors (BRT). These devices consolidate single transistors and external resistors into one unit. The series aims to simplify schematic design and reduce printed circuit board area consumption compared to discrete solutions.

Replacement Considerations

Direct substitutes include NSBA114YDXV6T1G and NSBA114TDP6T5G. Verify pin compatibility and exact resistor values before substitution.