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The NSBA114EDXV6T5 is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two PNP silicon transistors integrated with monolithic bias resistor networks in an SOT-563 package. It operates with a maximum collector-emitter voltage of -50 Vdc and a continuous collector current of -100 mAdc. The device includes internal resistors R1 and R2, both nominally 10 kOhms, to simplify circuit design. Thermal dissipation reaches 500 mW when both junctions are heated, with an operating temperature range spanning from -55°C to +150°C.
Verify the specific ordering suffix T5 against official documentation to confirm the 8 mm tape and reel packaging configuration containing 8000 units per reel. Ensure compatibility with standard SMT reflow processes given the lead-free solder plating specification. Confirm availability status as distribution channels may vary for this specific reel format.
Select this component when a dual PNP digital transistor with equal 10 kOhm bias resistors is required. Verify that the SOT-563 footprint matches the target PCB layout constraints. Consider the thermal resistance characteristics if multiple junctions will be active simultaneously during operation.
This part belongs to the NSBA114EDXV6 series of dual BRTs manufactured by onsemi. The series offers various resistor combinations within the same SOT-563 package to accommodate different biasing requirements while maintaining a consistent form factor for design flexibility.
NSBA114EDXV6T1 serves as a direct alternative within the same series, differing only in packaging pitch and reel quantity specifications.