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The NSBA114EDXV6T5G is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two PNP silicon transistors with monolithic bias resistor networks in an SOT-563 package. It integrates a series base resistor and a base-emitter resistor to replace discrete components. Key electrical parameters include a collector-emitter voltage of -50 Vdc, a collector current of -100 mAdc, and a total device dissipation of 500 mW when both junctions are heated. The internal resistors R1 and R2 are both 10 kΩ. The component operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging details. The 'T5' designation indicates availability in an 8 mm pitch tape and reel format containing 8000 units per reel. Ensure compatibility with lead-free solder plating requirements for final assembly processes.
Select this component when a dual PNP configuration with integrated biasing is required. The fixed 10 kΩ resistor values suit standard logic interface levels. Evaluate thermal resistance characteristics if multiple devices operate simultaneously, as total power dissipation decreases significantly when derating above 25°C ambient temperature.
This part belongs to the NSBA114EDXV6 series of dual Bias Resistor Transistors manufactured by onsemi. The series provides various resistor combinations within the same SOT-563 footprint. This specific variant features equal 10 kΩ resistors for both channels, offering symmetrical performance for dual-channel digital switching tasks.
NSBA114EDXV6T1 serves as a compatible alternative within the same series, differing primarily in the 4 mm pitch tape and reel packaging configuration rather than electrical function.