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The NSBA114TDP6T5G is a dual PNP Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates two separate PNP transistors with built-in bias resistors into a single SOT-563 package, which corresponds to the R-PDSO-F6 designation. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 0.1 A. It features a minimum DC current gain (hFE) of 160 and operates within a temperature range up to 150 °C. The component is lead-free, RoHS compliant, and classified under EAR99.
Verify the specific suffix TDP6 against official datasheets to confirm pinout and electrical characteristics, as suffixes often denote packaging or resistance values. Ensure compatibility with lead-free manufacturing processes and RoHS standards. Confirm availability through authorized distributors, noting that lead times may vary based on production schedules and regional supply constraints.
Select this component when a dual PNP configuration with integrated biasing is required to save board space. Compare the 10 kOhm typical input resistance and 50 V rating against circuit requirements. Consider the SOT-563 package size for density constraints. Verify that the 0.1 A current capacity meets load demands without exceeding power dissipation limits at expected operating temperatures.
This part belongs to the NSBA114 series of Bias Resistor Transistors from onsemi. These devices are designed to simplify analog and digital circuit designs by combining transistors with internal resistors. The series typically includes various configurations such as NPN and PNP types with different resistance ratios, all aimed at reducing component count and assembly time in consumer and industrial electronics.
NSBA114YDXV6T1G is a verified dual PNP alternative with similar 50 V and 100 mA ratings but may differ in specific resistance values and package handling. Verify pin-to-pin compatibility and electrical parameters before substitution.