NSBA114TDXV6T1

Overview

The NSBA114TDXV6T1 is a dual PNP Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-563 package. It integrates two monolithic bias networks with a single series base resistor and no base-emitter resistor per transistor. Maximum ratings include a collector-emitter voltage of -50 Vdc and a continuous collector current of -100 mAdc. The device features a typical input resistance of 10 kOhms and a minimum DC current gain of 80 at -5.0 mA collector current. Thermal characteristics specify a total device dissipation of 357 mW at 25°C for one junction heated, operating within a temperature range of -55°C to +150°C.

Feature Summary

• Integrates dual PNP transistors with monolithic bias resistor networks to replace discrete components.
• Eliminates external resistors by incorporating a series base resistor into the silicon structure.
• Designed for low-power surface mount applications requiring reduced board space.

Applications

• Low-power surface mount circuit designs
• Applications requiring simplified circuit design through component count reduction
• Board space-constrained digital switching systems

Procurement Notes

Verify the specific ordering suffix T1 against official documentation to confirm tape and reel packaging specifications. Ensure compatibility with RoHS standards and lead-free solder plating requirements before procurement. Cross-reference the manufacturer part number with authorized distributors to confirm availability and authenticity.

Selection Notes

Select this component when a dual PNP configuration with integrated biasing is required. Verify that the 10 kOhm input resistance meets the drive requirements of the control logic. Confirm that the -50 V collector-emitter voltage rating accommodates the maximum circuit supply voltages under all operating conditions.

Part Context

This device belongs to the NSBA114EDXV6 series of dual bias resistor transistors. It shares the SOT-563 package and general electrical architecture with variants like the NSBA114YDXV6T1, differing primarily in internal resistor values. The series is designed to simplify digital transistor circuits by integrating bias networks directly onto the die.

Replacement Considerations

Direct substitutes include other NSBA114EDXV6 series devices with matching resistor ratios. Verify pinout compatibility within the SOT-563 package. Check datasheets for equivalent hFE and saturation voltage characteristics to ensure functional parity in the target application.