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The NSBA114TDXV6T5 is a dual PNP silicon surface mount transistor featuring a monolithic bias resistor network in an SOT-563 package. It integrates two resistors: a series base resistor (R1) of 10 kΩ and an open base-emitter resistor (R2). Key electrical ratings include a collector-base voltage (VCBO) and collector-emitter voltage (VCEO) of -50 Vdc, with a maximum collector current (IC) of -100 mAdc. The device operates within a junction temperature range of -55°C to +150°C. DC current gain (hFE) ranges from 160 to 250 at VCE = -10 V and IC = -5.0 mA. Collector-emitter saturation voltage is -0.25 Vdc max at IC = -10 mA.
Verify the specific ordering suffix T5 indicates an 8 mm tape and reel configuration with 8000 units per reel. Confirm the device code corresponds to the 10 kΩ series base resistor configuration. Ensure compatibility with lead-free solder plating specifications for assembly processes. Cross-reference the marking code 0E for quality assurance during incoming inspection.
Select this component when a dual PNP BRT with a 10 kΩ series base resistor is required. The absence of a base-emitter resistor distinguishes it from standard BRT variants. Verify that the -50 V voltage rating and -100 mA current limit meet the application's electrical demands. Consider the SOT-563 package dimensions for PCB layout constraints.
This part belongs to the NSBA114EDXV6 series of dual bias resistor transistors manufactured by onsemi. The series includes various resistor combinations housed in the SOT-563 package. The T5 suffix specifically denotes the tape and reel packaging format, differing from the T1 variant which uses a 4 mm pitch tape.
Direct substitutes within the same family include NSBA114EDXV6T1, though packaging differs. Other variants like NSBA114YDXV6T1 offer different resistor ratios. Verify pinout compatibility and thermal characteristics before substitution.