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The NSBA114TDXV6T5G is a dual PNP Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-563 package. It integrates two PNP transistors with monolithic bias networks, each comprising a series base resistor and a base-emitter resistor. The device features a nominal R1 of 10 kΩ and an unspecified R2 value within the network. Key electrical ratings include a collector-base voltage (VCBO) and collector-emitter voltage (VCEO) of 50 Vdc, and a continuous collector current (IC) of 100 mAdc. The input forward voltage is rated at 40 Vdc, while the reverse input voltage is limited to 5 Vdc. DC current gain (hFE) typically ranges from 160 to 250 at IC = 5.0 mA.
Verify the specific ordering suffix T5G corresponds to the 8,000-unit tape and reel packaging configuration as listed in the official datasheet. Confirm that the NSBA prefix indicates compliance with unique site and control change requirements for automotive standards. Ensure the selected variant matches the required SOT-563 package dimensions and pinout configuration for your PCB layout.
Select this component when a dual PNP BRT solution is needed to minimize footprint and simplify biasing networks. Verify that the 50 Vdc voltage ratings and 100 mAdc current limits meet the application's operational requirements. Consider the thermal resistance characteristics of the SOT-563 package under expected ambient temperature conditions and power dissipation loads.
This part belongs to the DTA114TD/D family of Dual PNP Bias Resistor Transistors. It shares functional similarities with MUN5115DW1 and NSBA114TDP6 but differs in package type and specific resistor values. The NSBA prefix denotes automotive-grade qualification, distinguishing it from standard commercial variants within the same datasheet.
NSBA114TDXV6T1G offers identical functionality in a 4,000-unit tape and reel format. MUN5115DW1T1G provides a similar dual PNP BRT function but utilizes an SOT-363 package instead of SOT-563.