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The NSBA114YDP6T5G is a dual PNP Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates a single PNP transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This configuration replaces discrete components, simplifying circuit design. The device features R1 = 10 kΩ and R2 = 47 kΩ. It is available in an SOT-363 surface-mount package. The component is RoHS compliant and lead-free, suitable for general-purpose small signal applications requiring compact digital transistor solutions.
Verify the specific ordering suffix T5G to confirm tape-and-reel packaging quantity and variant details against official onsemi documentation. Ensure the part number matches the required SOT-363 package and electrical specifications for your design. Cross-reference datasheets to confirm RoHS compliance status and pinout configurations before procurement.
Select this component when a compact solution for PNP switching or biasing is required. The integrated 10 kΩ base resistor and 47 kΩ base-emitter resistor simplify external component count. Verify that the SOT-363 package dimensions fit the PCB layout constraints. Confirm thermal requirements and current handling capabilities align with the application's operational parameters.
This part belongs to the MUN5114/NSBA114 series of dual PNP BRTs from onsemi. These devices are engineered to reduce board space and assembly costs by combining a transistor with its necessary bias resistors into a single monolithic structure. The series offers consistent electrical characteristics for reliable performance in digital and analog switching applications.
Compatible substitutes include other dual PNP BRTs with similar R1=10kΩ/R2=47kΩ ratios in SOT-363 packages, such as the NSBA114DW1. Verify pin compatibility and electrical tolerances before substitution.