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The NSBA114YDXV6T1 is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two PNP silicon transistors integrated with monolithic bias resistor networks in an SOT-563 package. It provides a collector-emitter voltage of -50 Vdc and a continuous collector current of -100 mAdc. The device incorporates a series base resistor (R1) of 10 kOhms and a base-emitter resistor (R2) of 47 kOhms. Electrical characteristics include a minimum DC current gain (hFE) of 80 at -5.0 mA and -10 V, and a maximum collector-emitter saturation voltage of -0.25 Vdc at -10 mA. Total power dissipation reaches 500 mW when both junctions are heated.
Verify the specific suffix 'T1' indicates the 4 mm pitch tape and reel packaging configuration containing 4000 units per reel. Confirm RoHS compliance status directly with the manufacturer or authorized distributors, as regulatory adherence can vary by production batch and region. Ensure the ordering information matches the required shipping format for your assembly line.
Select this component when a dual PNP digital transistor configuration with asymmetric biasing is required. The 10 kOhm series resistor and 47 kOhemitter resistor combination offers specific input impedance characteristics distinct from standard symmetric BRTs. Verify that the SOT-563 footprint aligns with your PCB layout constraints and thermal management requirements.
This part belongs to the NSBA114EDXV6 series of dual Bias Resistor Transistors manufactured by onsemi. The series utilizes the SOT-563 plastic package (CASE 463A-01). Variations within the series differ primarily in the internal resistor values and marking codes, while sharing common electrical ratings and package dimensions.
Direct substitutes within the same family include NSBA114EDXV6T1, which features symmetric 10 kOhm resistors instead of the 10/47 kOhm configuration found in the NSBA114YDXV6T1.