NSBA114YDXV6T1G

Overview

The NSBA114YDXV6T1G is a dual PNP digital transistor manufactured by onsemi, housed in an SOT-563-6 surface-mount package. It integrates two PNP transistors with monolithic bias resistor networks, featuring typical base resistors of 10 kOhms and a typical resistance ratio of 0.021. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of -100 mA. With a power dissipation rating of 357 mW and a minimum DC current gain (hFE) of 80, it operates within a temperature range of -55°C to +150°C.

Feature Summary

• Integrates dual PNP transistors with monolithic bias resistor networks to replace discrete components
• Designed for board space reduction and system cost efficiency through component consolidation
• Features high DC current gain for reliable switching performance

Applications

• General-purpose switching applications requiring compact form factors
• Digital logic interface circuits utilizing pre-biased transistor arrays
• Embedded systems where board real estate optimization is critical

Procurement Notes

Verify the complete part number including the suffix T1G to ensure correct packaging and RoHS compliance status. Confirm the specific revision level against the manufacturer's latest documentation prior to ordering. Ensure that the SOT-563-6 footprint matches the design requirements. Check for any recent product change notices or lifecycle status updates from onsemi to avoid obsolescence risks during production.

Selection Notes

Select this component when a dual PNP configuration with integrated biasing is required. The 10 kOhm typical input resistance suits standard logic levels. Compare the 357 mW power dissipation limit against thermal constraints. Verify that the 50 V voltage rating exceeds the maximum circuit operating voltage. Consider the SOT-563-6 package dimensions for PCB layout compatibility.

Part Context

This part belongs to the NSBA114YDXV6 series of Dual PNP Bias Resistor Transistors. It is functionally related to the NSBA114YDXV6 variant but includes specific tape-and-reel packaging identifiers. The series is designed to simplify circuit design by integrating external biasing resistors directly onto the silicon die alongside the transistor elements.

Replacement Considerations

Direct substitutes include NSBA114YDXV6T1G without suffix variations if pinout and electrical characteristics remain identical. Cross-reference with other dual PNP BRTs in SOT-563 packages from different manufacturers only if pin configurations and electrical parameters are verified to be compatible.