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The NSBA115EDXV6T1 is a dual PNP digital transistor manufactured by onsemi, housed in an SOT-563-6 surface-mount package. It integrates two pre-biased NPN transistors with typical base resistors of 100 kOhms and a resistor ratio of 1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 357 mW, with a minimum DC current gain (hfe) of 80. Operating temperatures range from -55°C to +150°C.
Verify the exact ordering suffix against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through the latest datasheet revision. Cross-reference the component number with authorized distributors to validate authenticity and traceability before procurement.
Select this component when a dual PNP configuration with high input resistance is required. Ensure the 50V voltage rating and 100mA current capacity meet the specific load requirements. Verify that the SOT-563 footprint aligns with the PCB layout constraints and thermal management strategy.
This part belongs to the NSBC/NSBA series of digital transistors from onsemi. These components are designed to replace multiple discrete resistors and transistors, reducing board space and assembly complexity. The series offers various resistor values and configurations to suit different logic families and drive strengths.
Direct substitutes include NSBA114YDXV6T1G and NSBA113EDXV6T1G. Verify pin compatibility and electrical parameters such as hFE and resistor values before substitution. Check for any changes in packaging or RoHS status if replacing with older or newer revisions.