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The NSBA115EDXV6T1G is a dual NPN digital transistor manufactured by onsemi, housed in an SOT-563-6 surface-mount package. It features built-in bias resistors with a typical input resistance of 100 kOhms and a typical resistor ratio of 1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 357 mW, with a minimum DC current gain (hFE) of 80. Operating temperatures range from -55 C to +150 C.
Verify the complete part number including the suffix T1G against official onsemi documentation to ensure correct packaging and compliance specifications. Confirm RoHS status and lead-free certification requirements prior to ordering. Cross-reference the manufacturer's datasheet for specific handling and storage conditions related to moisture sensitivity levels.
Select this component when a dual NPN digital transistor with high input impedance is required. Ensure the 50 V voltage rating and 100 mA current capacity meet the load requirements. Verify that the SOT-563-6 footprint aligns with the PCB layout constraints and that the thermal performance is adequate for the intended power dissipation environment.
This component belongs to the NSBC115EDXV6 series of digital transistors from onsemi. These devices integrate NPN bipolar junction transistors with internal biasing networks to reduce external component count. The series is designed for efficient switching applications where space savings and simplified biasing are prioritized over discrete transistor solutions.
Consult onsemi's official cross-reference tools or distributor databases for verified equivalent parts. Ensure any substitute maintains the SOT-563-6 package, 50 V rating, and dual NPN configuration. Validate pinout compatibility before implementation.