NSBA115TDP6T5G

Overview

The NSBA115TDP6T5G is a dual NPN transistor array manufactured by onsemi, housed in a compact SOT-363 (SC-88) surface-mount package. This component integrates two independent NPN transistors within a single six-terminal device, designed for efficient space utilization in dense circuit layouts. It features built-in bias resistors to simplify circuit design and reduce external component count. The unit supports a maximum collector current of 0.1 A and withstands a collector-emitter voltage up to 50 V. With a minimum DC current gain of 160 and an operating temperature range extending to 150 °C, it provides reliable switching performance for low-power digital and analog applications.

Feature Summary

• Dual NPN configuration with integrated bias resistors
• Compact SOT-363 surface-mount packaging
• High thermal stability with elevated maximum junction temperature rating

Applications

• Low-power signal switching circuits
• Digital logic interface buffering
• Embedded serial communication line drivers

Procurement Notes

Verify the specific suffix T5G against official onsemi documentation to confirm tape-and-reel quantity and lead-free status. Ensure the ordering part number matches the exact electrical characteristics required for your design, as minor suffix variations may indicate different packaging or testing criteria. Cross-reference the manufacturer's latest datasheet for updated moisture sensitivity levels and handling instructions prior to procurement.

Selection Notes

Select this component when space constraints necessitate a dual-transistor solution with integrated biasing. The SOT-363 package offers a small footprint suitable for portable electronics. Verify that the 50 V collector-emitter voltage and 0.1 A current limits align with your circuit requirements. Consider the built-in resistor values if they match your biasing needs to avoid adding external components.

Part Context

This device belongs to onsemi's portfolio of small-signal transistor arrays designed for high-density PCB applications. It serves as a compact alternative to discrete transistor pairs, reducing assembly complexity. The SOT-363 form factor is widely used in mobile phones, PDAs, and other handheld devices where board real estate is limited. It complements other dual and quad transistor arrays in the manufacturer's lineup.

Replacement Considerations

Potential substitutes include the NSBA114TDP6T5G, which shares the same package and general function but may differ in specific electrical parameters such as breakdown voltage or current gain. Verify pinout compatibility and electrical ratings before substitution. Other SOT-363 dual NPN arrays from different manufacturers require careful comparison of hFE and VCEO specifications.