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The NSBA123EDXV6T1 is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two PNP silicon transistors integrated with monolithic bias resistor networks in an SOT-563 package. It provides a collector current of 100 mA and a collector-emitter voltage of -50 Vdc. Each transistor includes a series base resistor (R1) of 2.2 kOhms and a base-emitter resistor (R2) of 2.2 kOhms. The device offers a minimum DC current gain (hFE) of 8.0 at 5.0 mA and -10 V. Thermal characteristics include a total device dissipation of 500 mW when both junctions are heated, operating within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging pitch and reel specifications. Confirm RoHS compliance status and lead-free solder plating details directly with the manufacturer or authorized distributors prior to procurement.
Select this component for designs requiring dual PNP digital transistors with integrated 2.2 kOhm bias resistors. Ensure the SOT-563 package dimensions fit the PCB layout constraints. Verify that the -50 Vdc voltage rating and 100 mA current capacity meet the circuit requirements.
This part belongs to the NSBA114EDXV6/D family of Dual Bias Resistor Transistors. It shares the same SOT-563 package and general electrical ratings as other members like the NSBA114EDXV6T1, but differs in the specific internal resistor values (R1 and R2) configured for different biasing needs.
Direct substitutes within the same family include parts with similar PNP configurations and SOT-563 packaging, such as NSBA113EDXV6T1 or NSBA143EDXV6T1, provided their specific resistor values match the design requirements.