NSBA123JDXV6T1

Overview

The NSBA123JDXV6T1 is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two PNP silicon transistors integrated with monolithic bias resistor networks in an SOT-563 package. It provides a collector-emitter voltage of -50 V and continuous collector current of -100 mA. The internal resistors are R1 = 2.2 kΩ and R2 = 47 kΩ. Key electrical characteristics include a minimum DC current gain (hFE) of 80 and a maximum collector-base cutoff current of -100 nA. Thermal performance specifies a total device dissipation of 357 mW at 25°C with one junction heated.

Feature Summary

• Integrates two PNP transistors with dedicated series base and base-emitter resistors to replace discrete components.
• Designed for low-power surface mount applications requiring minimal board space.
• Eliminates external bias network components to simplify circuit design.

Applications

• Low-power surface mount logic circuits
• Switching applications in compact electronic devices
• Biasing networks for digital signal processing

Procurement Notes

Verify the specific ordering suffix and manufacturer part number against official distributor catalogs before procurement. Confirm RoHS compliance status and lead-free solder plating requirements with the supplier. Ensure the component meets the required thermal and electrical specifications for the intended application environment.

Selection Notes

Select this component when a dual PNP configuration with fixed bias resistors is required. The 2.2 kΩ series resistor and 47 kΩ base-emitter resistor combination suits specific drive conditions. Verify that the SOT-563 package dimensions fit the PCB layout constraints and that the thermal resistance values meet the system's heat dissipation needs.

Part Context

This component belongs to the NSBA114EDXV6/D family of dual Bias Resistor Transistors. It shares the same SOT-563 package and general electrical ratings as other members of the series, differing primarily in the internal resistor values. The 'J' designation indicates the specific 2.2 kΩ/47 kΩ resistor ratio within this product line.

Replacement Considerations

NSBA123EDXV6T1

FAQ

What are the internal resistor values for the NSBA123JDXV6T1?

The internal resistor network consists of a series base resistor (R1) of 2.2 kΩ and a base-emitter resistor (R2) of 47 kΩ.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at -50 Vdc.

Does the NSBA123JDXV6T1 contain built-in protection diodes?

The datasheet does not specify built-in protection diodes; it contains only the transistor and bias resistor network.