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Product Detailed Parameters
- Description：TRANS 2PNP PREBIAS 0.5W SOT563
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：2.2kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：500mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
Download product information
Overview
The NSBA123JDXV6T1G is a dual PNP Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-563 package. It integrates two transistors with monolithic bias networks, each comprising a series base resistor and a base-emitter resistor. Key electrical parameters include a maximum collector-emitter voltage of -50 Vdc and a continuous collector current of -100 mAdc. The device features typical internal resistors of R1 = 2.2 kOhms and R2 = 47 kOhms. Thermal characteristics specify a total device dissipation of 357 mW at 25°C for one junction heated, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Integrates dual PNP transistors with monolithic bias resistor networks to replace discrete components.
- Designed for low-power surface mount applications to reduce board space and component count.
- Features lead-free solder plating and RoHS compliance.
Applications
- Low-power surface mount circuits requiring simplified design.
- Applications where board space is at a premium.
- Digital transistor switching networks replacing single devices and external bias resistors.
Procurement Notes
Verify the specific ordering suffix T1G against the manufacturer's current datasheet to confirm tape and reel packaging details. Ensure the component meets RoHS standards and lead-free requirements as specified in the official documentation before procurement.
Selection Notes
Select this component when a dual PNP digital transistor configuration with specific bias ratios is required. Verify that the integrated resistor values of 2.2 kOhms and 47 kOhms align with the circuit design needs. Confirm the SOT-563 package fits the available PCB footprint.
Part Context
This part belongs to the NSBA114EDXV6 series of dual bias resistor transistors. It shares the same SOT-563 package and general electrical ratings as other members of the family, differing primarily in the specific resistance values of the integrated bias network.
Replacement Considerations
NSBA123EDXV6T1G
FAQ
What are the specific values of the integrated bias resistors?
The device includes a series base resistor (R1) of 2.2 kOhms and a base-emitter resistor (R2) of 47 kOhms.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is rated at -50 Vdc.
What package type does this component use?
The component is housed in an SOT-563 plastic package, also known as CASE 463A.
