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Product Detailed Parameters
- Description：TRANS BRT PNP DUAL 50V SOT563
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The NSBA123JDXV6T5 is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two PNP silicon transistors integrated with monolithic bias resistor networks in an SOT-563 package. It operates with a maximum collector-emitter voltage of -50 Vdc and a continuous collector current of -100 mAdc. The device includes a series base resistor (R1) of 2.2 kOhms and a base-emitter resistor (R2) of 47 kOhms. Total power dissipation reaches 500 mW when both junctions are heated, with an operating temperature range spanning from -55°C to +150°C.
Feature Summary
- Integrates two PNP transistors with dedicated bias resistors into a single surface-mount component
- Reduces printed circuit board space requirements by eliminating external discrete biasing components
- Simplifies circuit design through the inclusion of a monolithic bias network within the package
Applications
- Low-power surface mount applications where board space is limited
- Digital switching circuits requiring simplified biasing networks
- General-purpose transistor arrays for embedded systems
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging pitch and reel specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement. Ensure that the component availability aligns with project timelines, as supply chain conditions may vary.
Selection Notes
Select this component when a dual PNP configuration with asymmetric bias resistors is required. The 2.2 kOhm series resistor and 47 kOhm base-emitter resistor combination offers specific gain characteristics suitable for distinct logic interface levels. Evaluate thermal dissipation capabilities relative to ambient operating temperatures during the design phase.
Part Context
This part belongs to the NSBA114EDXV6 series family of dual Bias Resistor Transistors manufactured by onsemi. These devices share the SOT-563 footprint but differ in internal resistor values and transistor configurations. The series provides various combinations to replace multiple discrete components in compact electronic designs.
Replacement Considerations
Direct substitutes include other parts within the NSBA114EDXV6 series such as NSBA123EDXV6T1, provided the resistor ratios match application requirements. Verify pinout compatibility and electrical ratings before substitution.
