NSBA123JDXV6T5G

Overview

The NSBA123JDXV6T5G is a dual Bias Resistor Transistor (BRT) featuring two PNP transistors integrated with internal bias resistors. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device utilizes a SOT-563-6 surface-mount package, offering a power dissipation rating of 357 mW. Typical input resistance is 10 kOhms with a minimum DC current gain of 80. It functions within a temperature range of -55 C to +150 C.

Feature Summary

• Integrates dual PNP transistors with built-in bias resistors to replace discrete components and external resistor networks.
• Provides simplified circuit design by combining switching functionality with base drive requirements in a single compact package.

Applications

• General-purpose switching applications requiring dual PNP logic control
• Interface circuits for microcontrollers and digital logic gates
• Load switching in consumer electronics and industrial control systems

Procurement Notes

Verify component authenticity through authorized onsemi distributors or certified partners. Confirm the specific suffix T5G matches required reel packaging specifications. Check lifecycle status as this series may be subject to obsolescence notices. Ensure RoHS compliance documentation aligns with project regulatory requirements. Validate that the SOT-563-6 footprint matches the target PCB layout constraints.

Selection Notes

Select this component when a dual PNP configuration with integrated base resistors is required to reduce board space and assembly steps. The 10 kOhm typical input resistance suits standard logic level driving. Consider thermal management capabilities given the 357 mW dissipation limit in the small outline package. Verify voltage and current margins against peak load conditions to ensure reliable operation within the specified temperature range.

Part Context

This part belongs to the NSBA123JDXV6 family of digital transistors manufactured by onsemi. These devices are designed to simplify biasing networks by integrating resistors directly with the transistor die. The family targets applications needing compact, high-reliability switching solutions for low-power digital interfaces.

Replacement Considerations

Public confirmed substitute part numbers: NSBC123JDXV6T1G (NPN variant). Note polarity difference.