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The NSBA123TDP6T5G is a dual PNP Bias Resistor Transistor (BRT) from onsemi, integrating two transistors with monolithic bias networks into a single SOT-963 package. It replaces discrete components to reduce board space and cost. Key electrical parameters include a collector-emitter voltage of 50 Vdc, continuous collector current of 100 mAdc, and input forward voltage of 12 Vdc. The device features an internal series base resistor (R1) of 2.2 kΩ and a base-emitter resistor (R2). Operating temperature range extends from -55°C to +150°C.
Verify the specific ordering suffix T5G corresponds to the Tape & Reel shipping configuration containing 8,000 units per reel. Confirm that the NSBA prefix indicates compliance with automotive site and control change requirements distinct from standard commercial prefixes. Ensure the selected variant matches the required thermal and electrical specifications for the target application environment.
Select this component when a dual PNP configuration with integrated biasing is required to minimize footprint. The 50 V collector-emitter voltage rating suits low-voltage logic interfacing. Consider the 2.2 kΩ internal base resistor value for appropriate drive current requirements. Verify compatibility with the SOT-963 package dimensions if board layout constraints are critical.
This part belongs to the DTA123TD series of Dual PNP Bias Resistor Transistors. The NSBA prefix denotes specific manufacturing site controls for automotive applications. It shares functional similarities with other BRTs but offers dual channels in a compact SOT-963 form factor, distinguishing it from single-transistor BRT variants.
Direct substitutes must match the dual PNP BRT topology, 50 V rating, and SOT-963 package. Verify equivalent R1/R2 resistor values to ensure compatible drive characteristics. Cross-reference pinouts as SOT-963 styles may vary between manufacturers.