NSBA124EDXV6T1

Overview

The NSBA124EDXV6T1 is a dual Bias Resistor Transistor (BRT) manufactured by onsemi, featuring two PNP silicon transistors integrated with monolithic bias resistor networks in an SOT-563 package. It provides a collector-emitter voltage of -50 V and continuous collector current of -100 mA. The device includes internal resistors R1 and R2, both nominally 22 kΩ, to simplify circuit design. Key electrical characteristics include a minimum DC current gain (hFE) of 60 at -5.0 mA and -10 V, and a maximum collector-base cutoff current of -100 nA at -50 V.

Feature Summary

• Integrates two PNP transistors with built-in series base and base-emitter resistors into a single surface-mount component
• Reduces printed circuit board space requirements and eliminates the need for external discrete biasing components
• Designed for low-power applications where compact packaging and simplified circuit topology are prioritized

Applications

• Low-power surface mount digital switching circuits
• Logic interface level shifting between microcontrollers and peripheral devices
• General-purpose transistor arrays requiring minimal board real estate

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm tape and reel specifications. Confirm RoHS compliance status directly with the supplier or datasheet revision history prior to procurement. Ensure the component meets all absolute maximum ratings for your specific operating environment.

Selection Notes

Select this component when a dual PNP configuration with fixed 22 kΩ bias resistors is required. Compare the 22 kΩ resistor values against other variants in the NSBA114EDXV6 series if different biasing ratios are needed. Verify that the SOT-563 package dimensions fit within the available footprint constraints of the target design.

Part Context

This part belongs to the NSBA114EDXV6 series of dual Bias Resistor Transistors from onsemi. The series offers various combinations of internal resistors while maintaining the same SOT-563 package and core transistor specifications. It serves as a direct replacement for discrete transistor and resistor networks in space-constrained designs.

Replacement Considerations

NSBA114EDXV6T1: Different internal resistor values (10 kΩ). NSBA144EDXV6T1: Different internal resistor values (47 kΩ). NSBA114YDXV6T1: Asymmetric resistor values (10 kΩ / 47 kΩ). Verify pinout compatibility and resistor ratios before substitution.