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The NSBA124EDXV6T1G is a dual pre-biased NPN digital transistor manufactured by onsemi. It integrates two NPN bipolar junction transistors with internal bias resistors within a compact SOT-563 surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a typical input resistance of 22 kOhms, a power dissipation rating of 357 mW, and a DC current gain (hFE) minimum of 60. The component operates across an extended temperature range from -55°C to +150°C.
Verify the specific suffix 'DXV6T1G' against the manufacturer's latest datasheet to confirm pinout compatibility and RoHS status. Ensure the ordering code matches the exact reel or cut-tape quantity requirements for your assembly line. Cross-reference the part number with official distributor catalogs to confirm current production status and availability before finalizing procurement plans.
Select this component when a dual NPN configuration with fixed biasing is required for signal switching. The SOT-563 package is suitable for high-density PCB layouts. Consider the 50 V voltage rating and 100 mA current limit to ensure adequate headroom for the intended load. Verify thermal management requirements based on the 357 mW power dissipation specification under expected operating conditions.
This part belongs to the NSBA series of pre-biased transistors from onsemi. These devices are engineered to replace discrete transistor-resistor combinations, simplifying schematic design and reducing board space. The series offers various configurations including single and dual PNP/NPN options packaged in small outline transistor formats.
Compatible substitutes include other dual NPN pre-biased transistors in SOT-563 packages with matching 50 V ratings and similar bias resistor values. Verify pin-to-pin compatibility and electrical characteristics such as hFE and saturation voltage before substitution.