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The NSBA124EDXV6T5G is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two PNP silicon transistors with monolithic bias resistor networks in an SOT-563 package. Each transistor integrates a series base resistor and a base-emitter resistor to simplify circuit design. The device supports a collector current of up to 100 mA and withstands collector-emitter voltages of -50 Vdc. Internal resistors R1 and R2 are both 22 kΩ. It operates within a junction temperature range of -55°C to +150°C and offers a typical DC current gain (hFE) of 60 at -5 mA.
Verify the specific ordering suffix against official documentation to confirm packaging details such as tape and reel pitch or quantity. Ensure the component meets RoHS compliance requirements if applicable to your manufacturing process. Cross-reference the manufacturer part number with authorized distributors to confirm availability and authenticity before procurement.
Select this component when a dual PNP BRT configuration with 22 kΩ internal resistors is required. Verify that the -50 Vdc voltage rating and 100 mA current capacity align with the target circuit's operational limits. Consider the SOT-563 package dimensions for PCB layout constraints and ensure thermal dissipation requirements are met within the specified ambient temperature range.
This component belongs to the NSBA114EDXV6 series of dual Bias Resistor Transistors manufactured by onsemi. It shares the same SOT-563 package and general electrical characteristics as other members of the family, distinguished primarily by its specific internal resistor values. The series is designed to streamline the design of digital transistor circuits by integrating biasing networks directly into the semiconductor device.
NSBA124EDXV6T1 is a direct equivalent within the same product family offering identical pinout and electrical specifications.