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The NSBA124XDXV6T1 is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two PNP silicon transistors integrated with monolithic bias resistor networks in an SOT-563 package. It replaces discrete devices and external resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage of -50 Vdc, a continuous collector current of -100 mAdc, and total device dissipation of 500 mW when both junctions are heated. The internal resistors R1 and R2 are both 22 kOhms. Operating temperature ranges from -55°C to +150°C.
Verify the specific suffix 'T1' indicates the 4 mm pitch tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets lead-free solder plating specifications if required for the assembly process. Ensure compatibility with RoHS directives applicable to the target market before finalizing procurement orders.
Select this component when a dual PNP digital transistor configuration with 22 kOhm bias resistors is required. Verify that the -50 V collector-emitter voltage rating aligns with the maximum supply voltages in the application circuit. Consider the thermal resistance characteristics and power dissipation limits relative to the ambient operating temperature conditions expected during operation.
This part belongs to the NSBA114EDXV6/D family of dual Bias Resistor Transistors manufactured by onsemi. The family includes various resistor combinations within the same SOT-563 package footprint. This specific variant is distinguished by its unique 22 kOhm/22 kOhm resistor ratio and marking code '0L'.
Direct substitutes within the same family include NSBA124EDXV6T1, which shares identical electrical characteristics but may differ in shipping quantity or specific manufacturing lot details. Cross-manufacturer equivalents require verification of pinout compatibility and matching electrical ratings.