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The NSBA124XDXV6T1G is a dual digital transistor manufactured by onsemi, featuring two PNP bipolar junction transistors (BJTs) in a single SOT-563 surface-mount package. It integrates internal biasing resistors to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (Ic) of -100 mA. The device has a typical base resistor value of 10 kOhms and a minimum DC current gain (hFE) of 80. Power dissipation is rated at 357 mW, with an operating temperature range from -55°C to +150°C.
Verify the exact suffix configuration against official onsemi documentation to ensure compatibility with RoHS directives and specific tape-and-reel requirements. Confirm availability status as distribution channels may list obsolete or alternative variants. Cross-reference datasheet revision dates to validate parameter consistency before integration into production designs.
Select this component when a dual PNP configuration with integrated biasing is required in a small footprint. Compare the 10 kOhm base resistance against other series members like NSBC124EPDXV6T1G if NPN/PNP combinations are needed. Ensure the 50V voltage rating meets the system's maximum supply constraints and that the 100mA current limit suffices for the intended load.
This part belongs to the NSBA124YDXV6 family of dual PNP digital transistors. It shares the SOT-563 package form factor with related onsemi devices such as the NSBA114YDXV6T1G, which features similar electrical characteristics but may differ in specific resistor tolerances or manufacturing lot specifications within the same product line.
Direct substitutes include NSBA114YDXV6T1G from onsemi. Alternative manufacturers may offer pin-compatible parts in SOT-563 packages, but verification of hFE and Vce(sat) parameters is essential.