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The NSBA143EDXV6T1 is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two PNP silicon transistors integrated with monolithic bias resistor networks in an SOT-563 package. It operates with a maximum collector-emitter voltage of -50 Vdc and a continuous collector current of -100 mAdc. The device includes internal resistors R1 and R2, both specified at 4.7 kOhms. Thermal characteristics include a total device dissipation of 500 mW when both junctions are heated and a thermal resistance of 250 °C/W. The component supports an operating temperature range from -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging pitch and quantity. Confirm RoHS compliance status directly with the manufacturer or authorized distributors, as environmental declarations may vary by production batch. Ensure the procurement channel provides valid traceability for this discontinued series.
Select this component for designs requiring dual PNP switching with integrated base biasing. Verify that the 4.7 kOhm internal resistor values align with the target logic interface requirements. Confirm that the SOT-563 package dimensions fit the available PCB real estate constraints.
This part belongs to the NSBA114EDXV6 family of dual Bias Resistor Transistors. It shares the same SOT-563 physical footprint and general electrical ratings as other members of the series, differing primarily in the specific values of the integrated monolithic resistors.
Direct substitutes within the same family include NSBA143EDXV6T5, which offers identical functionality but utilizes a different tape and reel pitch configuration.