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The NSBA143TDXV6T1 is a dual PNP Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-563 package. It integrates two transistors with monolithic bias networks, eliminating external components. Key electrical parameters include a collector-emitter voltage of -50 Vdc and a continuous collector current of -100 mAdc. The device features a typical input resistor (R1) of 4.7 kOhms and an infinite base-emitter resistor (R2). DC current gain (hFE) has a minimum value of 160 at -5.0 mA and -10 V. Total power dissipation is rated at 357 mW for one junction heated and 500 mW for both junctions heated.
Verify the specific marking code '0F' corresponds to the NSBA143TDXV6T1 variant during incoming inspection. Confirm the SOT-563 package style matches the required pinout configuration for the target PCB footprint. Ensure thermal management strategies account for the specified power dissipation limits under operating conditions.
Select this component when a dual PNP configuration with integrated biasing is required. The 4.7 kOhm input resistor suits applications needing moderate drive currents. Verify that the -50 V rating meets the system voltage requirements. Consider the SOT-563 package dimensions against available board space constraints.
This part belongs to the NSBA114EDXV6 series family of dual BRTs. It shares the same SOT-563 package and general electrical characteristics as other members like the NSBA114YDXV6T1, but differs in internal resistor values. The 'TDX' suffix indicates specific resistor combinations within the product line.
NSBA143EDXV6T1 offers similar characteristics with different resistor values. NSBA114TDXV6T1 provides a 10 kOhm input resistor option. Cross-reference datasheet parameters carefully before substitution.