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The NSBA143TDXV6T5G is a dual PNP bipolar digital transistor manufactured by onsemi. It integrates two PNP transistors with internal bias resistors in a single SOT-563 surface-mount package. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 80, a typical input resistance of 4.7 kOhms, and a resistor ratio of 0.1. It operates within a temperature range of -55°C to +150°C and features a power dissipation rating of 500 mW.
Verify the complete part number including the trailing 'G' suffix to ensure RoHS compliance and specific tape-and-reel packaging configuration. Confirm availability status as production cycles may vary. Cross-reference the datasheet revision date to ensure alignment with current manufacturing specifications before finalizing procurement orders.
Select this component when a dual PNP configuration with integrated biasing is required in a small footprint. Ensure the 50 V voltage rating and 100 mA current capacity meet the load requirements. Verify that the 4.7 kOhm input resistance matches the driving source impedance and logic levels of the controlling circuitry.
This part belongs to the NSBA143 series of pre-biased digital transistors from onsemi. It is specifically engineered as a PNP variant within the broader family of BRTs, offering a compact alternative to discrete resistor-transistor networks. The SOT-563 package allows for automated assembly and reduced board space compared to traditional through-hole or larger surface-mount solutions.
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate equivalent dual PNP digital transistors in the SOT-563 package from other manufacturers only after verifying pinout compatibility and matching electrical parameters such as VCEO, IC, and hFE.