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The NSBA143ZDP6T5G is a dual PNP bipolar digital transistor manufactured by onsemi. It integrates two PNP transistors with built-in bias resistors in a compact SOT-563-6 surface-mount package. The device features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Typical input resistance is 4.7 kOhms with a resistor ratio of 0.1. DC current gain (hFE) has a minimum value of 80. Operating temperature ranges from -55°C to +150°C, with a maximum power dissipation of 250 mW.
Verify the exact suffix DP6 against official onsemi documentation to confirm tape-and-reel specifications and moisture sensitivity levels. Confirm RoHS compliance status through the manufacturer's material declaration. Check for obsolescence notices as this component family may have lifecycle changes. Ensure ECAD models match the specific CASE 463A-01 footprint requirements for PCB layout.
Select this component when dual PNP switching with fixed base biasing is required in a small outline package. Compare hFE minimums and VCE(sat) values against alternative BRT families if specific gain or saturation performance is critical. Verify that the 4.7 kOhm typical input resistance aligns with the driving source impedance capabilities of the upstream logic circuitry.
This part belongs to the NSBA143 series of pre-biased resistive transistor arrays. It serves as a monolithic replacement for discrete PNP transistors paired with external base resistors. The series offers consistent electrical characteristics across multiple package options including SOT-23 and SC-74 variants for different board space constraints.
NSBA143EDXV6T1G: Dual PNP in SOT-563-6 with similar electrical ratings. NSBA143EF3T5G: Single PNP in SOT-1123; requires two units for dual functionality. NSBA143TF3T5G: Single PNP in SOT-1123; not a direct pin-compatible substitute.