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The NSBA143ZDXV6T1 is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two PNP silicon transistors integrated with monolithic bias resistor networks in an SOT-563 package. It operates with a maximum collector-emitter voltage of -50 Vdc and a continuous collector current of -100 mAdc. The device incorporates a series base resistor (R1) of 4.7 kOhms and a base-emitter resistor (R2) of 47 kOhms. Thermal characteristics include a total device dissipation of 500 mW when both junctions are heated at 25°C ambient temperature.
Verify the specific ordering suffix against official documentation to confirm packaging pitch and reel specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement. Ensure the component meets all environmental regulations required for the intended manufacturing process.
Select this component for designs requiring dual PNP digital transistors with specific 4.7 kOhm and 47 kOhm internal resistance values. Evaluate the SOT-563 package dimensions against available PCB real estate constraints. Consider the thermal dissipation limits relative to the expected operating ambient temperature range.
This part belongs to the NSBA114EDXV6/D family of dual Bias Resistor Transistors published by onsemi. The series provides various combinations of integrated resistors within the same SOT-563 footprint, allowing designers to standardize on a single package type while adjusting internal resistance ratios for different logic drive requirements.
NSBA143ZDXV6T1G is a confirmed lead-free variant within the same product family.