NSBA143ZDXV6T5G

Overview

The NSBA143ZDXV6T5G is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two PNP silicon transistors integrated with monolithic bias resistor networks in an SOT-563 package. It provides a collector-emitter voltage of -50 Vdc and a maximum collector current of -100 mAdc per channel. The internal resistors are configured as R1 = 4.7 kΩ and R2 = 47 kΩ. Total device power dissipation reaches 500 mW when both junctions are heated at 25°C ambient temperature.

Feature Summary

• Integrates two PNP transistors with dedicated series base and base-emitter resistors to replace discrete components
• Designed for low-power surface mount applications requiring reduced board space and simplified circuit design
• Features lead-free solder plating and operates within a wide junction temperature range

Applications

• Low-power surface mount digital logic circuits
• Embedded systems requiring compact transistor arrays
• Bias network integration for signal switching applications

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm packaging pitch and reel specifications. Ensure the component meets RoHS compliance requirements for the target assembly process. Cross-reference the marking code '0K' with the datasheet to validate the internal resistor configuration before finalizing procurement orders.

Selection Notes

Select this component when a dual PNP BRT with a 4.7 kΩ series base resistor and 47 kΩ base-emitter resistor is required. The SOT-563 package is suitable for high-density layouts where minimizing footprint is critical. Evaluate thermal derating curves if operating near the maximum junction temperature limits.

Part Context

This part belongs to the NSBA114EDXV6 series of dual Bias Resistor Transistors manufactured by onsemi. The series offers various resistor combinations within the same SOT-563 package to accommodate different biasing needs without changing the physical footprint.

Replacement Considerations

NSBA143ZDXV6T1