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The NSBA144EDXV6T5 is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two PNP silicon transistors with monolithic bias resistor networks in an SOT-563 package. It integrates series base and base-emitter resistors to replace discrete components. Key electrical parameters include a collector-emitter voltage of -50 Vdc, continuous collector current of -100 mAdc, and total device dissipation of 357 mW at 25°C. The typical input resistors are 47 kOhms each, with a ratio of 1.0. DC current gain is specified at a minimum of 80.
Verify the specific ordering suffix against official documentation before procurement. Confirm that the 'T5' designation corresponds to the required tape and reel pitch and quantity specifications. Ensure compatibility with RoHS standards if applicable to the target assembly process. Cross-reference the manufacturer part number with authorized distributors to confirm availability and authenticity.
Select this component when a dual PNP configuration with fixed internal biasing is required. The 47 kOhm resistor values suit applications needing moderate base drive currents. Evaluate the thermal resistance and power dissipation limits relative to the ambient operating temperature. Consider the SOT-563 footprint constraints during the layout phase to ensure proper soldering and heat dissipation.
This device belongs to the NSBA114EDXV6 series of dual BRTs manufactured by onsemi. It shares the same physical package and general topology as variants like the NSBA114EDXV6T1 but differs in internal resistor values and polarity. The series is designed for compact digital logic interfaces. Check the datasheet for pinout configurations and marking codes to distinguish it from other members of the family.
NSBA114EDXV6T1