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The NSBA144EDXV6T5G is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two PNP silicon transistors integrated with monolithic bias resistor networks in an SOT-563 package. It provides a collector-emitter voltage of -50 Vdc and a maximum collector current of -100 mAdc per channel. The device incorporates series base resistors and base-emitter resistors, each valued at 47 kΩ. Total device power dissipation reaches 500 mW when both junctions are heated, with a thermal resistance of 250°C/W. Operating temperatures range from -55°C to +150°C.
Verify that the ordering suffix T5G corresponds to the specific tape and reel configuration required for your assembly line. Confirm the lead-free solder plating status aligns with your manufacturing environmental standards. Ensure the SOT-563 footprint matches your PCB layout specifications before finalizing procurement orders.
Select this component when a dual PNP digital transistor solution is needed to replace multiple discrete parts. Verify that the 47 kΩ internal resistor values suit your specific logic interface requirements. Consider the 500 mW total power dissipation limit when designing for high ambient temperatures or dense packaging environments.
This part belongs to the NSBA114EDXV6 series of dual Bias Resistor Transistors manufactured by onsemi. The series includes various resistor combinations tailored for different logic families. The SOT-563 package is standard for these devices, offering a compact form factor suitable for modern electronics manufacturing.
NSBA114EDXV6T1 offers identical electrical characteristics but utilizes a 4 mm pitch tape and reel format instead of the 2 mm pitch found in the T5 variant.