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The NSBC113EDXV6T1 is a dual NPN silicon surface mount transistor with a monolithic bias resistor network, housed in an SOT-563 package. It integrates two Bias Resistor Transistors (BRT), each containing a series base resistor and a base-emitter resistor. Key electrical parameters include a collector-emitter voltage of 50 Vdc, continuous collector current of 100 mAdc, and total device dissipation of 357 mW at 25°C. The internal resistors are R1 = 1.0 kΩ and R2 = 1.0 kΩ. Operating temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix against manufacturer documentation to confirm availability and compliance status. Confirm that the SOT-563 package dimensions align with the target PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under actual operating conditions.
Select this component when a dual NPN configuration with equal 1.0 kΩ bias resistors is required. Compare the 50 V breakdown voltage and 100 mA current limits against circuit demands. Evaluate the SOT-563 package size relative to available board real estate compared to alternative transistor arrays.
This part belongs to the NSBC1xxxDXV6T1 series of dual Bias Resistor Transistors from onsemi. It shares the same SOT-563 package and general electrical ratings as other variants in the family, differing primarily in the specific values of the integrated monolithic bias resistors.
Direct substitutes within the same series include NSBC123EDXV6T1 and NSBC143EDXV6T1, which share the SOT-563 package but feature different resistor ratios. Verify that the alternative part's specific R1 and R2 values match the original circuit design requirements.