NSBC113EDXV6T1G

Overview

The NSBC113EDXV6T1G is a dual NPN Bipolar Digital Transistor manufactured by onsemi, housed in an SOT-563-6 surface-mount package. It integrates two NPN transistors with built-in bias resistors to simplify circuit design. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Each transistor features a typical input resistance of 1 kOhm with a resistor ratio of 1. The unit offers a minimum DC current gain (hFE) of 3 and handles a power dissipation of 357 mW. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• Integrates dual NPN transistors with monolithic bias resistor networks to replace discrete components and external biasing circuits.
• Provides simplified switching functionality through pre-biased internal resistors, reducing board space and assembly complexity.
• Designed for high-temperature operation with a maximum junction temperature rating of +150°C.

Applications

• General-purpose switching applications requiring compact digital transistor solutions.
• Interface circuits between logic gates and load drivers.
• Battery-powered devices where space-saving integrated bias networks are critical.

Procurement Notes

Verify component authenticity through authorized onsemi distributors or certified suppliers. Check the manufacturer's latest Product Change Notification (PCN) and End-of-Life (EOL) status before procurement, as availability may be limited. Ensure the ordering suffix matches the required tape-and-reel packaging specifications for automated assembly processes.

Selection Notes

Select this component when a dual NPN configuration with low base resistance (1 kOhm) is required for fast switching or high drive capability. Compare against the NSBC115EDXV6T1G if higher current gain (hFE min 80) is needed instead. Confirm that the SOT-563-6 footprint aligns with the target PCB layout constraints and thermal management requirements.

Part Context

This part belongs to the NSBC113EDXV6 series of Bias Resistor Transistors (BRTs). It shares the SOT-563-6 package form factor with other variants in the family but differs in internal resistor values and transistor characteristics. It serves as a compact alternative to discrete BJT arrays in modern consumer and industrial electronics.

Replacement Considerations

Direct substitutes include NSBC115EDXV6T1G for higher gain requirements. Cross-brand equivalents such as Nexperia PEMD3 or Diodes Incorporated DCX114TH-7 may offer functional compatibility but require verification of pinout and electrical parameters against the original datasheet.