NSBC113EPDXV6T1

Overview

The NSBC113EPDXV6T1 is a dual Bias Resistor Transistor (BRT) containing one NPN and one PNP silicon transistor with monolithic bias resistor networks in an SOT-563 package. It features a collector-emitter voltage of 50 Vdc, continuous collector current of 100 mAdc, and total device dissipation of 500 mW at 25°C. The integrated resistors are R1 = 1.0 kΩ and R2 = 1.0 kΩ. DC current gain ranges from 3.0 to 5.0 at 5 mA and 10 V. Collector-emitter saturation voltage is 0.25 Vdc at -10 mA and -5 mA base current.

Feature Summary

• Integrates complementary NPN and PNP transistors with internal bias resistors to replace discrete components
• Designed for low power surface mount applications where board space is limited
• Eliminates external resistor networks to simplify circuit design

Applications

• Low power surface mount applications
• Circuit designs requiring compact digital transistor arrays
• Applications prioritizing reduced component count and board space

Procurement Notes

Verify the specific ordering suffix and RoHS compliance status directly with onsemi or authorized distributors before procurement. Confirm that the SOT-563 package dimensions match the target PCB footprint. Ensure the 1.0 kΩ resistor values align with the required biasing parameters for the intended application.

Selection Notes

Select this component when a complementary NPN/PNP pair with identical 1.0 kΩ base and emitter resistors is required. Verify that the 50 V breakdown voltage and 100 mA current ratings meet the circuit requirements. Consider the 500 mW thermal dissipation limit and ambient temperature derating curves for proper heat management.

Part Context

This part belongs to the NSBC114EPDXV6 series of dual BRTs manufactured by onsemi. It shares the same SOT-563 package and general electrical characteristics as other members of the family, differing primarily in the specific values of the integrated monolithic bias resistors.

Replacement Considerations

Direct substitutes within the same series include NSBC123EPDXV6T1 and NSBC143EPDXV6T1, which offer different resistor combinations but maintain the same package and core transistor specifications.