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The NSBC113EPDXV6T1G is a dual NPN digital transistor array manufactured by onsemi, housed in an SOT-563-6 surface-mount package. It integrates two NPN transistors with built-in bias resistors, featuring a typical input resistance of 1 kOhm and a resistor ratio of 1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 357 mW, with a minimum DC current gain (hFE) of 3. Operating temperatures range from -55°C to +150°C.
Verify the complete part number including the suffix T1G to ensure correct packaging and RoHS compliance status. Confirm that the SOT-563-6 package matches your PCB footprint requirements. Check for any recent product change notifications or lifecycle status updates directly from onsemi documentation before finalizing procurement plans.
Select this component when a dual NPN configuration with low base resistance is required. The 1 kOhm input resistor suits direct logic interface applications. Ensure the 50 V voltage rating and 100 mA current capacity meet the specific load requirements. Compare against other NSBC series variants if higher gain or different resistor ratios are needed.
This component belongs to the NSBC113EPDXV6 series of digital transistors. It shares the SOT-563-6 form factor with related parts like NSBC114 and NSBC115 but differs in internal transistor polarity and resistor values. The EPDXV6 designation indicates specific manufacturing process and packaging details defined by onsemi.
Direct substitutes may include NSBC113EPDXV6T1G equivalents from other manufacturers if pin-compatible. Verify electrical parameters such as hFE, VCEO, and R1/R2 ratios carefully. Alternative packages like SOT-363 require adapter considerations.