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The NSBC114EDP6T5G is a dual NPN digital transistor manufactured by onsemi, housed in an SOT-963 surface-mount package. It integrates two NPN transistors with monolithic bias networks, eliminating external resistors to reduce board space and component count. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 10 kOhms and a power dissipation rating of 339 mW. It operates within a temperature range of -55°C to +150°C and meets RoHS compliance standards.
Verify the specific suffix P6 against official datasheets to confirm pinout and packaging details, as variations exist within the NSBC114 family. Confirm availability status directly with authorized distributors, as lead times may vary. Ensure the selected variant matches the required thermal and electrical constraints for the target application environment.
Select this component when a compact dual NPN solution with integrated biasing is required. Compare the 10 kOhm base resistance against other variants like the NSBC114EPDXV6T1G if different drive currents are needed. Verify that the SOT-963 package dimensions fit the available footprint and that the 50V rating exceeds the maximum circuit voltage.
This part belongs to the NSBC114 series of complementary bipolar digital transistors. It shares functional similarities with the NSBC114EDXV6T1G but utilizes the SOT-963 package instead of SOT-563. The series is designed to replace discrete transistor-resistor combinations, offering a standardized solution for embedded logic and interface applications across consumer and industrial electronics.
The NSBC114EDXV6T1G serves as a direct functional substitute in the SOT-563 package. For identical SOT-963 packaging, verify compatibility with the NSBC114YDP6T5G, noting potential differences in internal resistor ratios or hFE characteristics between the ED and YD sub-series.