NSBC114EDXV6

Overview

The NSBC114EDXV6 is a dual NPN digital transistor manufactured by onsemi, housed in an SOT-563-6 surface-mount package. It integrates two NPN transistors with monolithic bias resistor networks to replace discrete components. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 10 kOhms and a typical resistor ratio of 0.21. Minimum DC current gain (hFE) is specified at 80. Power dissipation reaches 357 mW, with an operating temperature range from -55°C to +150°C.

Feature Summary

• Integrates dual NPN transistors with built-in bias resistors to simplify circuit design
• Reduces printed circuit board space and component count compared to discrete solutions
• Provides stable switching performance through integrated base-emitter and series base resistors

Applications

• General-purpose switching applications requiring compact form factors
• Interface circuits for microcontrollers and logic gates
• Driver stages for low-current loads in consumer electronics

Procurement Notes

Verify the specific suffix configuration against the original design requirements, as variations may exist within the product line. Confirm RoHS compliance status directly with the manufacturer or authorized distributors, as environmental declarations can vary by production batch. Ensure the sourcing channel provides valid traceability documentation for quality assurance purposes.

Selection Notes

Select this component when a dual NPN configuration with fixed biasing is required in a small outline package. The 10 kOhm input resistance suits standard logic levels, while the 50 V rating provides adequate headroom for low-voltage systems. Consider the thermal limitations of the SOT-563 package if high power dissipation is anticipated in the application environment.

Part Context

This part belongs to the NSBC series of Bias Resistor Transistors (BRTs) from onsemi. These devices are designed to streamline the design process by combining transistors and resistors into a single monolithic structure. The series offers various configurations and resistance values to accommodate different circuit needs while maintaining a consistent footprint.

Replacement Considerations

Direct substitutes include NSBC114EDXV6T1G and NSBC114EPDXV6T1G. Verify pinout compatibility and electrical specifications before substitution. Alternative manufacturers such as Nexperia or Diodes Incorporated offer similar BRT packages, but parameter matching is essential.