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Product Detailed Parameters
- Description：TRANS 2NPN PREBIAS 0.5W SOT563
- Series：*
- Mfr：onsemi
- Package：Cut Tape (CT)
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The NSBC114EDXV6T1 is a dual bias resistor transistor (BRT) from onsemi, featuring two NPN silicon transistors with monolithic bias networks in an SOT-563 package. It integrates series base and base-emitter resistors to replace discrete components. Key electrical parameters include a collector-emitter voltage of 50 Vdc, continuous collector current of 100 mAdc, and total device dissipation of 500 mW when both junctions are heated. The typical input resistors R1 and R2 are both 10 kOhms. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Integrates two NPN transistors with built-in bias resistor networks into a single surface-mount device.
- Designed to simplify circuit design by eliminating external discrete biasing components.
- Reduces printed circuit board space requirements and overall component count.
Applications
- Low power surface mount applications where board space is limited.
- Digital switching circuits requiring integrated biasing.
- General-purpose transistor arrays for signal processing.
Procurement Notes
Verify the specific ordering suffix against the manufacturer's documentation to confirm packaging details. The 'T1' suffix indicates a tape and reel quantity of 4000 units. Confirm RoHS compliance status as required by project specifications before finalizing procurement orders.
Selection Notes
Select this component when a dual NPN configuration with fixed 10k Ohm bias resistors is required. Ensure the 50 V collector-emitter voltage rating meets the circuit's maximum operating voltage. Verify that the SOT-563 package dimensions fit the available footprint on the target PCB layout.
Part Context
This part belongs to the NSBC1xxxDXV6T1 series of dual BRTs from onsemi. Variations within the series differ primarily in the internal resistor values (R1 and R2), such as the NSBC114YDXV6T1 which uses different ratios. All share the same SOT-563 package and general electrical characteristics.
Replacement Considerations
Direct substitutes include other NSBC1xxxDXV6T1 variants with matching pinouts but different resistor values, such as NSBC124EDXV6T1 or NSBC144EDXV6T1. Cross-manufacturer equivalents like the DTC114EUA-TP may be considered if pin compatibility and electrical ratings align.
FAQ
What are the specific values for the internal resistors R1 and R2?
For the NSBC114EDXV6T1, both the series base resistor (R1) and the base-emitter resistor (R2) have a nominal value of 10 kOhms.
What is the maximum power dissipation for this device?
The total device dissipation is 357 mW when one junction is heated and 500 mW when both junctions are heated at an ambient temperature of 25°C.
Does this component contain lead-free solder plating?
Yes, the datasheet specifies that these are Pb-Free devices with lead-free solder plating.
