NSBC114EDXV6T1G

NSBC114EDXV6T1G

$0.31
  • Description:TRANS PREBIAS 2NPN 50V SOT563
  • Series:-

SKU:123ec6053ac0 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS 2NPN 50V SOT563
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:500mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563

Download product information

NSBC114EDXV6T1G

Overview

The NSBC114EDXV6T1G is a dual digital transistor manufactured by onsemi, featuring two NPN transistors integrated with monolithic bias resistor networks. It operates within a collector-emitter voltage range of up to 50 V and supports a continuous collector current of 100 mA. The device utilizes an SOT-563-6 surface-mount package, ensuring compact board integration. Key electrical characteristics include a minimum DC current gain (hFE) of 80 and a typical input resistance of 100 kOhms. Designed for high reliability, it functions across a temperature range from -55 °C to +150 °C, with a power dissipation rating of 357 mW.

Feature Summary

  • Integrates dual NPN transistors with built-in bias resistors to replace discrete components
  • Provides simplified circuit design through monolithic resistor network integration
  • Supports surface-mount installation in compact SOT-563-6 packaging

Applications

  • General-purpose switching applications requiring dual NPN logic control
  • Interface circuits for microcontrollers and digital logic systems
  • Biasing networks in signal processing and amplification stages

Procurement Notes

Verify the complete part number including the suffix T1G to ensure compliance with RoHS standards and lead-free manufacturing specifications. Confirm that the SOT-563-6 package matches the target PCB footprint and soldering profile requirements. Cross-reference the manufacturer datasheet for specific handling precautions related to moisture sensitivity level and electrostatic discharge protection during storage and assembly processes.

Selection Notes

Select this component when a dual NPN configuration with high input impedance is required. The 100 kOhm base resistor suits applications needing lower drive currents compared to lower resistance variants. Ensure the 50 V breakdown voltage aligns with the system's maximum operating voltage. Consider the thermal management capabilities provided by the 357 mW power dissipation rating under expected ambient conditions.

Part Context

This component belongs to the NSBC114EDXV6 series of digital transistors from onsemi. It is part of a broader family of Bias Resistor Transistors designed to reduce component count and board space. The series offers various resistance ratios and polarities to accommodate different circuit requirements while maintaining standardized packaging for automated assembly.

Replacement Considerations

Direct substitutes may include other dual NPN digital transistors in SOT-563 packages with similar electrical ratings. Verify compatibility regarding pinout configuration, hFE ranges, and resistor values before implementation. Alternative manufacturers should provide equivalent performance metrics for voltage, current, and thermal operation.

NSBC114EDXV6T1GNSBC114EDXV6T1G
$0.31
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