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Product Detailed Parameters
- Description：TRANS BRT NPN DUAL 50V SOT563
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The NSBC114EDXV6T1 is a dual NPN Bias Resistor Transistor (BRT) housed in an SOT-563 package. It integrates two monolithic bias networks, each consisting of a series base resistor and a base-emitter resistor, to replace discrete components. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 Vdc, a continuous collector current (IC) of 100 mAdc, and a total device power dissipation (PD) of 357 mW at 25°C. The internal resistors are R1 = 10 kΩ and R2 = 10 kΩ. The junction temperature range spans from -55°C to +150°C.
Feature Summary
- Integrates two NPN transistors with monolithic bias resistor networks into a single surface-mount device.
- Reduces printed circuit board space requirements by eliminating external biasing components.
- Simplifies circuit design through the consolidation of transistor and resistor functions.
Applications
- Low power surface mount applications where board space is limited.
- General-purpose switching circuits requiring integrated biasing.
- Digital logic interface circuits replacing discrete resistor-transistor combinations.
Procurement Notes
Verify the specific ordering suffix against the manufacturer's documentation to confirm packaging quantity and lead-free status. Confirm that the component meets RoHS compliance requirements for the intended manufacturing process. Ensure the selected variant matches the required tape and reel specifications for automated assembly lines.
Selection Notes
Select this component when a dual NPN configuration with fixed 10 kΩ base and emitter resistors is required. Evaluate the thermal resistance characteristics against the expected ambient operating conditions. Compare the integrated solution against discrete alternatives to assess space savings and bill-of-materials reduction.
Part Context
This part belongs to the NSBC114DXV6 series of dual BRTs manufactured by onsemi. The series offers various resistor combinations within the same SOT-563 footprint. The 'E' designation specifically indicates the 10 kΩ / 10 kΩ resistor ratio configuration.
Replacement Considerations
Compatible substitutes include other NSBC114DXV6 variants with identical pinouts but different resistor values, provided the circuit tolerances allow. Cross-reference with other manufacturers' dual NPN BRTs in the SOT-563 package, ensuring matching VCEO, IC, and R1/R2 values.
FAQ
What is the function of the internal resistors in the NSBC114EDXV6T1?
The internal resistors form a monolithic bias network consisting of a series base resistor (R1) and a base-emitter resistor (R2), eliminating the need for external discrete resistors.
What is the maximum collector-emitter voltage for this device?
The maximum collector-emitter voltage (VCEO) is rated at 50 Vdc.
How many transistors are contained within the SOT-563 package?
The package contains two independent NPN transistors, each with its own integrated bias resistor network.
