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The NSBC114EDXV6T5G is a dual digital transistor manufactured by onsemi, featuring two NPN transistors integrated with built-in bias resistors. It is housed in a compact SOT-563 surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Typical base resistance is 10 kOhms with a minimum DC current gain (hFE) of 80. Power dissipation reaches 357 mW, operating within a temperature range of -55°C to +150°C.
Verify the exact suffix configuration against official datasheets before procurement, as variations may exist. Confirm RoHS compliance status directly with the manufacturer or authorized distributors, as regulatory adherence depends on specific production batches and regional requirements.
Select this component when space constraints necessitate integrating both transistor and resistor functions into a single package. Ensure the required hFE meets circuit drive needs and that the 50V rating exceeds the maximum load voltage. Verify thermal management capabilities align with the 357 mW power dissipation limit under expected operating conditions.
This part belongs to the NSBC series of dual pre-biased transistors from onsemi. It serves as a compact alternative to discrete BJT and resistor networks, simplifying PCB layout and assembly processes while maintaining consistent electrical characteristics across manufacturing lots.
Direct substitutes include NSBC114EPDXV6T1G and NSBC114EPDXV6T1. Verify pinout compatibility and electrical parameters such as VCEO and IC ratings before substitution.