NSBC114EPDXV6T1

Overview

The NSBC114EPDXV6T1 is a dual bias resistor transistor (BRT) containing one NPN and one PNP silicon surface mount transistor with monolithic bias resistor networks. It integrates two resistors per device: a series base resistor (R1) and a base-emitter resistor (R2). Both transistors feature R1 and R2 values of 10 kΩ. The collector-emitter breakdown voltage is 50 Vdc, and the maximum continuous collector current is 100 mAdc. DC current gain is 35 at IC = 5.0 mA and VCE = 10 V. Collector-emitter saturation voltage is 0.25 Vdc at IC = 10 mA and IB = 0.3 mA. Total device power dissipation is 500 mW when both junctions are heated.

Feature Summary

• Integrates complementary NPN and PNP transistors with monolithic bias resistor networks to replace discrete components
• Designed for low power surface mount applications where board space is limited
• Available in SOT-563 package with Pb-Free options

Applications

• Low power surface mount circuit designs requiring board space optimization
• Digital switching applications utilizing integrated biasing
• Complementary transistor arrays for signal processing or logic interfacing

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status as original specifications may vary by production batch. Ensure proper handling procedures are followed during storage and assembly to maintain device reliability.

Selection Notes

Select this component for applications requiring complementary NPN/PNP configurations with fixed internal biasing. Verify that the 10 kΩ resistor values align with the target circuit's drive requirements. Consider thermal derating curves if operating above 25°C ambient temperature.

Part Context

This part belongs to the NSBC114EPDXV6/D series manufactured by onsemi. It is housed in the SOT-563 (CASE 463A) plastic package. The series includes variants with different resistor combinations and transistor polarities, all sharing the same physical footprint for design flexibility.

Replacement Considerations

Direct substitute: NSBC114EPDXV6T1G. Verify pinout compatibility and electrical characteristics match before implementation.

FAQ

What are the specific resistor values for the NSBC114EPDXV6T1?

Both the series base resistor (R1) and the base-emitter resistor (R2) are 10 kΩ.

What is the maximum power dissipation for this device?

The total device power dissipation is 500 mW when both junctions are heated at an ambient temperature of 25°C.

Does this component include both NPN and PNP transistors?

Yes, it contains one NPN and one PNP transistor within a single SOT-563 package.