SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NSBC114EPDXV6T5 is a complementary dual Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates one NPN and one PNP transistor with monolithic bias resistor networks in a single SOT-563 package. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA for both polarities. Typical base resistors are 10 kΩ, with an emitter-base resistor ratio of approximately 0.21. The unit supports surface mount installation and operates within a temperature range of -55°C to +150°C, dissipating up to 500 mW.
Verify the specific suffix configuration against the target datasheet revision, as manufacturing sites and compliance statuses may vary. Confirm RoHS and halogen-free status directly with the supplier or official documentation prior to procurement. Ensure the ordering part number matches the required tape and reel specifications for automated assembly processes.
Select this component when a compact solution for both NPN and PNP switching is required. Verify that the 10 kΩ base resistance aligns with the driving source impedance and desired switching speed. Ensure the 50 V breakdown voltage exceeds the maximum circuit voltage under all operating conditions. Check thermal dissipation limits relative to the available PCB copper area.
This component belongs to the NSBC series of complementary digital transistors from onsemi. It shares the SOT-563 form factor with other variants in the family but differs in internal resistor values and transistor gain characteristics. The EPDXV6 designation indicates specific manufacturing site and process controls associated with this production run.
Direct substitutes include NSBC114EPDXV6T1G and NSBC114YPDXV6T1G. Verify pin compatibility and electrical parameters before substitution. Alternative packages such as SOT-963 require mechanical redesign.